Atlas Großwohnsiedlung Thüringen : Raum. Identität. Transformation

Die ostdeutschen Großwohnsiedlungen haben mit der politischen, sozialen und ökonomischen Wende seit 1990 stark an Ansehen verloren. In dem Seminar soll die kritisch-analytische Auseinandersetzung mit dem Stadtumbau Ost am Beispiel der Großwohnsiedlungen in Ostdeutschland Ost anhand der Transformation der Großwohnsiedlungen in Thüringen geübt werden. Die Transformationen der Siedlungen soll in Zeichnungen und kurzen Texte beschrieben und bewertet werden. Sowohl die Datensammlung als auch die Diskussion der Ergebnisse findet in enger Zusammenarbeit mit den jeweiligen Kommunen statt. Während des Seminars erarbeitet jeweils ein Team aus zwei Studierenden anhand einer ihnen zugeteilten Siedlung einen Teil eines Siedlungs-Atlas. Durch die Erarbeitung des Siedlungsatlas, der die Siedlungen gegenüberstellt, soll die räumliche Dimension des Transformation Prozesses (ab)lesbar und bewertbar gemacht werden. Das arch.lab ist eine Plattform für Forschung in der Lehre an der Fakultät Architektur. Es hat die Aufgabe, forschungsorientiertes Studieren und Lehren im Kontext der Studiengänge Architektur und der Kunstgeschichte zu entwickeln und zu fördern. Je Studienjahr vergibt das arch.lab bis zu sechs Förderungen an Seminarkonzepte der Fakultät, die für das neu eingeführte Modul „Forschungsfelder“ im Masterstudiengang Architektur entwickelt werden

Optical addressing of an individual erbium ion in silicon

The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond using optical readout. A spin readout fidelity of about 90% has been demonstrated with both electrical readout and optical readout, however, the thermal limitations of the electrical readout and the poor photon collection efficiency of the optical readout hinder achieving the high fidelity required for quantum information applications. Here we demonstrate a hybrid approach using optical excitation to change the charge state of the defect centre in a silicon-based SET, conditional on its spin state, and then detecting this change electrically. The optical frequency addressing in high spectral resolution conquers the thermal broadening limitation of the previous electrical readout and charge sensing avoids the difficulties of efficient photon collection. This is done with erbium in silicon and has the potential to enable new architectures for quantum information processing devices and to dramatically increase the range of defect centres that can be exploited. Further, the efficient electrical detection of the optical excitation of single sites in silicon is a major step in developing an interconnect between silicon and optical based quantum computing technologies.Comment: Corrected the third affiliation. Corrected one cross-reference of "Fig. 3b" to "Fig. 3c". Corrected the caption of Fig. 3a by changing (+-)1 to

Automation-driven transformation of road infrastructure: a multi-perspective case study

Automated driving is widely assumed to play a major role in future mobility. In this paper, we focus on “high driving automation” (SAE level 4) and analyze potentials in terms of more efficient traffic flows, travel times, and user benefits as well as potential impacts on urban neighborhoods and potentials for sustainable urban development. Along selected use cases of automated vehicles in the region of Karlsruhe, Germany, we show that at least moderate user benefits can be expected from travel time savings, with the extent depending on the defined operational design domain of the vehicles and the routes taken. With regard to residential development of urban neighborhoods, there are opportunities for repurposing public space. However, these are limited and require parallel regulatory measures to become effective

Трансформация наследия промышленного строительства Санкт-Петербурга Варианты будущего развития южного промышленного пояса

Together with ITMO University of St. Petersburg, the National Superior School of Architecture of Strasbourg (ENSAS) and the Faculty of Architecture of the Karlsruhe Institute of Technology (KIT) set up a Collaborative Urban Design Studio on the transformation of the southern industrial belt of St. Petersburg. The sustainable redevelopment of postindustrial landscapes into attractive urban districts through new programmatic and spatial possibilities taking into account the sense of place and the unique characteristics of St. Petersburg’s urban geography, the reuse of industrial structures and their adaption to new activities, the designing of spatial structures for lively mixed-use neighbourhoods with housing and work facilities meeting different needs and incomes, are some of the key issues for a common workshop scheduled in November 2015.Национальная высшая архитектурная школа Страсбурга и архитектурный факультет Технического института Карлсруэ совместно с Санкт-Петербургским национальным исследовательским университетом информационных технологий, механики и оптики организовали Объединенную градостроительную студию для разработки проекта трансформации южного промышленного пояса Санкт-Петербурга. В перечень ключевых вопросов, которые предстоит разобрать на совместных мастерских в ноябре 2015 года, входят: устойчивое развитие постиндустриальных ландшафтов и превращение их в привлекательные городские районы, с использованием новых программных и пространственных возможностей и учетом атмосферы места и уникальных географических характеристик Санкт-Петербурга; новое применение промышленных сооружений и их адаптация к новым видам деятельности; проектирование пространственных структур для оживленных кварталов смешанного использования, где будут находиться жилые и офисные здания, отвечающие различным потребностям и уровням благосостояния

Optical addressing of an individual erbium ion in silicon

The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications under development. So far, it has been accomplished for only two defect centres in crystallineThis work was financially supported by the ARC Centre of Excellence for Quantum Computation and Communication Technology (CE110001027) and the Future Fellowships (FT100100589 and FT110100919)

Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor

We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width